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应力导致的Pb(Zr_(0.7)Ti_(0.3))O_3薄膜两相共存

Stress-induced biphase coexistence in Pb(Zr_(0.7)Ti_(0.3))O_3 film grown on MgO substrate
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摘要 Pb(Zr0.7Ti0.3)O3薄膜与其MgO衬底的热膨胀系数不同会导致膜内产生压应力。通过求解弹性力学方程,得到了膜内一组可能的应力分布。把此热应力应用于修正的Landau-Devonshire理论,研究了Pb(Zr0.7Ti0.3)O3薄膜的铁电性。指出衬底引发的梯度热应力可能导致膜内四方和斜方相共存,但整个膜的平均效应则使膜具有连续相变特征。 For Pb(Zr0.7Ti0.3)O3 film, the difference or coefficient oI thermal expansion between the him and the substrate on which the film is grown may result in compressive stress. A possible set of stress distribution in the film was obtained by solving the elastic mechanics equations. The ferroeletricity of Pb(Zl0.7Ti0.3)O3 film grown on MgO substrate was computed by applying the stresses to the modified Landau-Devonshire thermodynamic theory. The tetragonal and rhombohedral phases may coexist in the film for the gradient stress induced by the substrate. The mean of out-plane spontaneous polarization and dielectric susceptibility change continuously with temperature.
作者 苏丽秋
出处 《磁性材料及器件》 北大核心 2013年第3期20-22,54,共4页 Journal of Magnetic Materials and Devices
关键词 PZT薄膜 应力 铁电性 相变 PZT film stress ferroeletricity phase transition
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参考文献16

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