摘要
Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.
Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.
基金
supported by the National Program for Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607)
the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048)
the National Science and Technology Major Projects (Grant No. 2009ZX02035)
the State Key Laboratory of ASIC and System Project (Grant No. 11MS017)
the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001)
