摘要
采用射频磁控溅射技术在硅衬底上制备了ZnO∶Eu3+薄膜,利用X射线衍射仪和荧光光谱仪对样品的微观结构及光学性能进行了表征。结果表明:ZnO∶Eu3+薄膜具有六角纤锌矿结构;在基质激子的激发下,ZnO∶Eu3+有很强的Eu红光特征发射且强度随着ZnO缺陷的增加而增加,激发光谱中出现ZnO的带间激发与纯Eu2O3的直接激发光谱,证明了ZnO和Eu3+之间存在能量转移;荧光衰减谱也进一步证明Eu3+依赖ZnO缺陷的能量转移过程,Eu3+的衰减时间随着ZnO缺陷的衰减时间的变化而变化,促进能量传递的一个有效的方法就是在ZnO基质中确定一个合适的缺陷中心。
ZnO∶ Eu3+ films were deposited on Si substrates by rf magnetron sputtering.The obtained samples were characterized by X-ray diffraction(XRD)and fluorescence spectrometer.The effects of sputtering power on the structure and photoluminescence(PL) and luminescent mechanism were studied.The results showed that the prepared films possess a polycrystalline hexagonal wurtzite crystal structure;under the UV excitation,Eu3+ doped ZnO nanocrystalline induced the strong red luminescence from the Eu3+ with the complete quenching broad emission and PL intensity increased as the ZnO nano-defects increasing.From the ZnO interband excitation and direct excitation of pure Eu2O3 in excitation spectrum of ZnO∶ Eu3+ nanocrystals,it is showed that energy transfer from ZnO host to Eu3+ existed and ZnO nano-defects promote energy transfer.Determined a defect center is an effective method to promote energy transfer
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第5期843-846,850,共5页
Journal of Synthetic Crystals
基金
河北省自然科学基金(F2012201093
F2012201042)
河北省应用基础研究计划重点基础研究项目(12963929D)
