期刊文献+

硅材线锯切割过程中的温度分析 被引量:2

Finite Element Simulation of the Silicon Wiresaw Temperature Field
下载PDF
导出
摘要 为了更有效地控制硅材在线锯切割过程中因温度变化而引起的材料翘曲变形,采用流体力学的前处理软件建模及对模型进行网格划分,对硅材与磨浆的流固耦合系统的温度进行了CFD分析,此外还分析了磨浆进口速度和进口温度对硅材温度分布的影响。结果表明,硅材和磨浆的温度在线走丝方向上逐渐升高,到出口附近最高,增大磨浆的进口速度或减小磨浆的进口温度,有利于降低硅材在切割过程中的温度。 In order to avoid the bow and warp on silicon ingot from temperature variation during slicing, it introduces the importance of the temperature control during silicon slicing, applies CFD to simulate the temperature filed of fluid and silicon ingot in the fluid -solid coupling system. The temperature distribution and profile through vertical section of silicon wafer is obtained in different fluid inlet speed and temperature respectively. The results show that the temperature of the silicon and fluid increases along the wire direction and reaches maximum near the outlet, higher speed and lower temperature of the inlet fluid both helps to reduce the silicon temperature during slicing.
出处 《机械设计与制造工程》 2013年第3期66-69,73,共5页 Machine Design and Manufacturing Engineering
基金 国家自然科学基金资助项目(51075367) 浙江省自然科学基金资助项目(Y1090931)
关键词 硅材切割 流固耦合 温度分析 Silicon Slicing Fluid- solid Coupling Temperature Field Analysis
  • 相关文献

参考文献8

  • 1吴明明,周兆忠,巫少龙.单晶硅片的制造技术[J].新技术新工艺,2004(5):7-10. 被引量:16
  • 2葛培琪.固结磨料金刚石锯丝制造技术[J].金刚石与磨料磨具工程,2006,26(6):12-13. 被引量:16
  • 3Yamada T, Fukunaga M, Ichikawa T, et al. Prediction of war- ping in silicon wafer slicing with wire saw [ J ]. Theoretical and Applied Mechanics, 2002, 51 : 251 -258. 被引量:1
  • 4Bhagavat S, Kao I. A finite element analysis of temperature varia- tion in silicon wafers during wire saw slicing [ J ]. International Journal of Machine Tools & Manufacture, 2008, 48 ( 1 ) : 95 - 106. 被引量:1
  • 5Hull R. Properties of Crystalline Silicon [ M ]. London : INSPEC, Inst of Engineering & Technology, 1999. 被引量:1
  • 6Gastinger K, Hamdi M. The importance of temperature control during crystallization and wafering in silicon solar cell production [ J]. Photovoltaic International journal, 2009, 52(3 ) : 49- 54. 被引量:1
  • 7Reddy J, Gartling D. The Finite Element Method in Heat Trans- fer and Fluid Dynamics, second [ M ]. Boca Raton : CRC Press, 2001. 被引量:1
  • 8Peng Y, Cheng Z, Zhang Y, et al. Temperature distributions and thermal deformations of mirror substrates in laser resonators [ .I ]. Applied Optics, 2001,40 (27) : 4824 -4830. 被引量:1

二级参考文献7

  • 1葛培琪,孟剑锋,陈举华,章亮炽.硅晶体精密切片技术及相关基础研究[J].工具技术,2005,39(9):3-6. 被引量:8
  • 2[2]Jun Sugawara,Hiroshi Hara and Akira Mizoguchi.Development of Fixed -Abrasive-Grain Wire Saw with Less Cutting Loss[J].SEI (Sumitomo Electric Industries,Ltd.) Technical Review,June 2004,58:7-11 被引量:1
  • 3[3]Clark W I,Shih A J,Hardin C W,Lemaster R L,McSpadden S B.Fixed abrasive diamond wire machining-part Ⅰ:process monitoring and wire tension force[J].International Journal Machine Tools & Manufacture,2003,43:523-532 被引量:1
  • 4[4]Chiba Y,Tani Y,Enomoto T,Sato H.Development of a High-Speed Manufacturing Method for Electroplated Diamond Wire Tools[J].Annals of the CIRP,2003,52(1):281 -284 被引量:1
  • 5[5]Toshiyuki Enomoto,Yutaka Shimazaki,Yasuhiro Tani,Mari Suzuki,Yuichi Kanda.Development of a Resinoid Wire Containing Metal Powder for Slicing a Silicon Ingot[J].Annals of the CIRP,1999 48 (1):273-276 被引量:1
  • 6王先逵.精密加工技术实用手册[M].北京:机械工业出版社,1999.. 被引量:3
  • 7康仁科,郭东明,霍风伟,金洙吉.大尺寸硅片背面磨削技术的应用与发展[J].半导体技术,2003,28(9):33-38. 被引量:26

共引文献29

同被引文献5

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部