摘要
The optimizations of the emitter region and the metal grid of a concentrator silicon solar cell are il- lustrated. The optimizations are done under 1 sun, 100 suns and 200 suns using the 2D numerical simulation tool TCAD software. The optimum finger spacing and its range decrease with the increase in sheet resistance and con- centration ratio. The processes of the diffusion and oxidization in the manufacture flow of the silicon solar cells were simulated to get a series of typical emitter dopant profiles to optimize. The efficiency of the solar cell under 100 suns and 200 suns increased with the decrease in diffusion temperature and the increase in oxidation tempera- ture and time when the diffusion temperature is lower than or equal to 865 ℃. The effect of sheet resistance of the emitter on series resistance and the conversion efficiency of the solar cell under concentration was discussed.
The optimizations of the emitter region and the metal grid of a concentrator silicon solar cell are il- lustrated. The optimizations are done under 1 sun, 100 suns and 200 suns using the 2D numerical simulation tool TCAD software. The optimum finger spacing and its range decrease with the increase in sheet resistance and con- centration ratio. The processes of the diffusion and oxidization in the manufacture flow of the silicon solar cells were simulated to get a series of typical emitter dopant profiles to optimize. The efficiency of the solar cell under 100 suns and 200 suns increased with the decrease in diffusion temperature and the increase in oxidation tempera- ture and time when the diffusion temperature is lower than or equal to 865 ℃. The effect of sheet resistance of the emitter on series resistance and the conversion efficiency of the solar cell under concentration was discussed.
基金
supported by the National Natural Science Foundation of China(Nos.60776046,60976046,60837001,61021003)
the National Basic Research Program of China(No.2010CB933800)
