摘要
The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home\|made high vacuum/rapid thermal processing chemical vapor deposition equipment.The HBTs show good performance and industrial use value.The current gain is beyond 100;the breakdown voltage BV ceo is 3.3V,and the cut\|off frequency is 12.5GHz which is measured in packaged form.
The microwave SiGe Heterojunction Bipolar Transistors (HBT) were fabricated by the material grown with home\|made high vacuum/rapid thermal processing chemical vapor deposition equipment.The HBTs show good performance and industrial use value.The current gain is beyond 100;the breakdown voltage BV ceo is 3.3V,and the cut\|off frequency is 12.5GHz which is measured in packaged form.
基金
Project Supported by National Natural Science Foundation of China Under Grant No.6983 60 2 0 and 694 760 3 9.
