摘要
本文研究了利用N型InSb单晶生长中形成的,与[111]生长方向相垂直的载流子密度分布的层状不均匀性,研制出灵敏度磁阻比值R_B/R_O=3(B=0.3T)的磁敏电阻。它们的零磁场电阻R_O分别是20～100Ω和2×10～2×50Ω。同时对这种元件的可靠性进行了试验研究,失效率λ(t)达到小于1×10^(-5)h^(-1)的水平。
This paper investigates the inhomogeneous distribution of layers with different electron concentration in the N type InSb crystals, these layers is perpendicular to the [111] direction of InSb crystal growth. The discrete magnetoresistors of InSb crystals of sensibility RB/RO= 3 (B = 0.3T) was fabricated by this N type InSb crystals. They zero magnetic field Resistance RO is 20-100Ω and 2×(10-50)Ω respectively. As well as the above the reliability of these sensors had studied, the results show the failure rate was λ(t)<10×10-6 h-1.
出处
《传感技术学报》
CAS
CSCD
1991年第1期1-4,共4页
Chinese Journal of Sensors and Actuators
基金
"七五"攻关项目
