摘要
利用深能级瞬态谱 (DL TS)研究了常规分子束外延和原子氢辅助分子束外延生长的掺杂 Si和 Be的 Ga As同质结构样品中缺陷的电学特性 .发现原子氢辅助分子束外延生长的样品中缺陷的浓度与常规分子束外延生长的样品相比有明显的降低 。
The electrical activity of defects in GaAs grown on GaAs substrates doped with Si and Be by both conventional molecular beam epitaxy (MBE) and atomic hydrogen assisted MBE (H MBE) were characterized by deep level transient spectroscopy. The trap densities are significantly reduced in the homoepitaxial GaAs grown by H MBE compared to that grwon by MBE. The reduction of trap densities is attributed to in situ passivation of these defects by atomic H during the growth.The improvement characteristics of GaAs materials will be significance for fabrication of semiconductor devices.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第3期191-193,共3页
Journal of Infrared and Millimeter Waves
基金
国家攀登计划
国家自然科学基金!(编号 697760 1 6和 1 982 30 0 1 )资助项目&&
关键词
原子氢辅助分子束外延生长
砷化镓
DLTS
atomic hydrogen assisted molecular beam epitaxy, deep level transient spectroscopy, deep level defects.
