摘要
报道了优化的p -n型Al0 .85Ga0 .15As/GaAs太阳能电池器件工艺。分别采用真空蒸发Cr/Au和AuGeNi/Au制作正面栅线和背面电极 ,并分别在 4 50℃和 3 50℃下快速合金化形成欧姆接触。采用NH4 OH :H2 O2 :H3PO4 :H2 O体系的选择性腐蚀液去除高掺杂的GaAs接触层。采用真空蒸发技术制备ZnS/MgF2 双层复合减反射层。测试结果表明 ,采用优化工艺制备的器件的光电转换效率得到了明显提高。
The optimized fabrication technology of p-n Al 0.85Ga 0.15 As/Gs solar cells is reported. The front contacting grids of the fabricated so lar cells are formed by evaporating Cr/Au and metallized at 450 ℃ to form Ohmic contact. The back contacts are formed by evaporating AuGeNi/Au and metallized at 350 ℃ . The heavily-doped Gs cap layers are removed by the NH 4OH:H 2O 2:H 3PO 4:H 2O selective etching solution. Double-layered ZnS/MgF 2 is evaporated on the Al 0.85Ga 0.15 As window as the anti-reflection layers. A maximum efficiency of 19.40% for the fabricated 2 cm×2 cm solar cell has been achieved under 1 sun AM1.5 conditio n.
出处
《半导体光电》
CAS
CSCD
北大核心
2000年第5期339-341,345,共4页
Semiconductor Optoelectronics
基金
8 63航天领域课题资助项目!(863- 2 - 4- 6- 2A)
