摘要
利用传统的烧结工艺,制备了不同AlN含量的镁橄榄石陶瓷,并研究了AlN组分对Mg2SiO4材料晶相结构以及介电常数和介质损耗的影响。XRD衍射和性能实验结果表明:在1380℃保温时间2h得到了Mg2SiO4和AlN晶体。少量AlN添加剂的加入,提高了Mg2SiO4陶瓷介电性能和体积密度。当AlN添加剂的加入量为2wt%时,得到了介电常数为6.8,介质损耗为4.3×10-4,体积密度为3.05g/cm3的介质材料。
（1-x）Mg2siO4xA1N ceramics were prepared corresponding to 0〈x〈0.17 by the conventional solid state reaction method.Their crystal structure, dielectric properties were investigated. The result of XRD diffraction and material properties indicated that, Mg2SiO, and A1N crystal is obtain at 1380C insulation 2 hours by A1N additions powder.this is a small A1N additions powder, Dielectric properties and bulk density Mg2SiO4 ceramics were improved. When 2%（mass fraction） A1N are added to the powder, thus has obtained the material of permittivity is 6.8, dielectric losses is 4.3 x 10-4 and bulk density is 3.05g/cm3.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2013年第4期9-11,共3页
China Ceramics
基金
江西省科技厅资助项目(2012BBE500035)
景德镇陶瓷学院大学生创新性试验项目
