摘要
HIT电池由日本Sanyo公司于1990年提出,目前已达到23.7%的最高效率。HIT电池制备的关键技术在于其本征缓冲层的工艺。大量研究表明本征硅薄膜缓冲层在硅片上沉积时很容易发生外延生长。对于外延生长影响的认识存在着很大争议,有学者认为其中含有大量缺陷态,会降低电池性能,并提出了完全阻止外延生长的新结构,但也有学者认为恰恰是外延结构真正起到了钝化界面的作用。分析认为,不同甚至相互矛盾的实验结果可能与外延结构生长时缺陷态密度的控制有关,外延结构不是影响电池性能的关键,外延结构中的缺陷态密度才是影响电池性能的重要因素。
HIT solar cell was invented by Sanyo in 1990. Now its conversion efficiency has achieved 23.7%.The key technology of HIT solar cells is the-intrinsic buffer layer. Numerous studies show that epitaxial structure is easy to form when silicon thin films buffer layer deposits on wafers. There is a considerable controversy about the mechanism of the impact for the epitaxial structure, some scholars believe that it contains a large number of defect states, and will reduce the cell＇s performance; they even present some new structures to entirely prevent epitaxial growth. However, other scholars believe that it is precisely the epitaxial structure which plays a key role to passivate the interface. Analyses show that, different and even conflicting results may be related to the density of defect states of the epitaxial structure, epitaxial structure is not the key factors affecting solar cells＇ performance, and on the contrary, the density of defect states of interface is the important factor.
出处
《电源技术》
CAS
CSCD
北大核心
2013年第4期690-692,共3页
Chinese Journal of Power Sources
基金
国家科技支撑计划(2010BAK69B25)
关键词
HIT电池
缓冲层
外延
缺陷态密度
HIT solar cell
buffer layer
epitaxial
density of defect states
