摘要
对ＣｄＳｅ－ＴＦＴ的制作工艺进行了探索，对ＴＦＴ矩阵的关键材料──半导体层ＣｄＳｅ的性质进行了研究。利用ＺＣ－３６型高阻仪研究了ＣｄＳｅ薄膜电阻率随蒸发速率的变化，用三探针法和 Ｃｕｒｖｅ Ｔｒａｃｅｒ ＱＴ－２对 ＴＦＴ样管的基本电性能进行了测试，得到载流子迁移率为１７０ｃｍ２／Ｖ·ｓ，ＯＦＦ态电流小于１０－１０Ａ， ＯＮ态电流为１０－４Ａ。
The preparing process of CdSe-TFT was studied. Especially the growth of CdSe film, the semiconductor layer of the TFT was investigated. The resistivity of the film vs. the evaporation rate was measured by a high impedance tester. The electric characters of the TFT were measured by using Curve Tracer QT-2. The mobility of carrier is 170cm'/V .s; IOFF, 10-10A; ION, 10-4A and ION/IOFF, 106,respectively.
出处
《液晶与显示》
CAS
CSCD
2000年第1期35-39,共5页
Chinese Journal of Liquid Crystals and Displays
基金
国家科技部"863"计划!715-003-0070
