摘要
相对于噪声系数,噪声参数更加全面地反映了半导体器件噪声特性。介绍了微波低噪声器件噪声参数产生机理及测量原理,分析了噪声参数测量方法。针对低噪声封装器件的特点,自制了测试夹具以及表征测试夹具的TRL校准件,优选Agilent公司带有噪声选件的矢量网络分析仪、噪声源和Maury公司的阻抗调配器组建了测量系统。选用NEC公司的NE32584C低噪声器件作为被测对象,开展了10～15 GHz频段的噪声参数测量工作。为了验证测量系统和数据准确性,设计制作了无源标准件。验证数据的一致性表明获得了可靠、令人满意的噪声参数测试结果。
Compared with noise factor, the noise parameter reflects the noise character of the semiconductor devices more comprehensively. The mechanism and measurement principle of the noise parameter of microwave low noise device was discussed and the measurement method of noise parameter was analyzed. Test fixture and TRL calibration standard against the character of packaging device was made, measurement system based on the noise source and VNA with noise option from Agilent, and impedance tuner from Maury was built. The NE32584C low noise device from NEC as the detection objective was chosen to carriy on the measurement of noise parameter between 10 GHz andl5 GHz. To verify the correctness of measurement system and data, passive standard was designed. The consistency of the verified data shows that reliable and satisfactory noise parameter measurement result is obtained.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第4期312-316,共5页
Semiconductor Technology
关键词
低噪声器件
噪声参数测量
测试夹具
校准件
测试验证
low noise devices
noise parameter measurement
test fixture
calibration standard
verification of measurement
