摘要
对采用KOH溶液腐蚀单晶硅制备自锐式纳米针尖的一次成型制作工艺进行了研究,为提高自锐式纳米针尖的纵横比,根据各向异性腐蚀针尖的自锐效应模型,分析了腐蚀溶液的浓度及掩模形状对针尖形状的影响,得到了提高自锐式纳米针尖纵横比的条件,实验结果表明,在15mol/L,60℃的KOH腐蚀液中采用五边形掩模可获取纵横比约等于1,针尖曲率半径小于10nm的自锐式纳米针尖,针尖侧壁由{113}晶面组成。
The nano-silicon-tips were fabricated by KOH solution with the anisotropic wet etching technique based on self-sharpening effect were investigated. In order to improve the aspect ratio of the silicon tip, the effects of the solution concentration and the shape of etch mask on the shapes of silicon tips were studied by the tip self-sharpening model. Simultaneously, the self-sharpening conditions of the tip on （100） silicon wafers were obtained. The re- suits showed that the nano-silicon-tips were formed by the anisotropic etching in 15 mol/L KOH etchant at 60 ℃with the pentagon etch masks, The self-sharpening nano-silicon-tips with { 113 } etch planes had a radius of curvature of 〈10 nm.
出处
《压电与声光》
CSCD
北大核心
2013年第1期125-128,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金青年科学基金资助项目(61104226)
国家重大科学研究计划基金资助项目(2010CB934700)
关键词
纳米针尖
自锐效应
纵横比
各向异性腐蚀
nano-tip self-sharpening effect
aspect ratio anisotropie etching
