摘要
本文提出了计算高能电子和 非电离能量损失 (NIEL)的 Monte Carlo方法 ,首次利用 Monte Carlo方法计算了高能电子和 6 0 Co 的 NIEL.给出了电子和 6 0 Co 在半导体硅材料中产生的 NIEL和缺陷分布 .计算结果与文献的比较表明模型是合理的 .
A Monte Carlo method of calculating non ionizing energy loss (NIEL) induced by electrons and gammas in materials was presented.Based on this method,a computer program nemed NIELEG was written which can be used in any materials of layered structure to calculate damage of coupled electrons and gamma.In this paper,the damages irradiation induced by below 10MeV electrons and 60 Co in silicon were calculated with the program.These results lead us to conclude that the method is available.
出处
《光子学报》
EI
CAS
CSCD
2000年第5期415-419,共5页
Acta Photonica Sinica
基金
国防预研基金资助项目
