摘要
用浅 P+ 离子注入 In Ga As/ In Ga As P应变多量子阱 (MQW)激光器结构 ,经 H2 / N2 混合气氛下的快速退火 ,体内 MQW层发生组份混合 (intermixing) ,导致器件的带隙波长蓝移 (blue shift) ,结构的光荧光 (PL )峰值波长向短波方向移动了 76 nm。作者认为 。
It has been obtained that a waveleng th blue-shift of 76 nm using shallow P + ion implanting into a epitaxy-finishe d laser-structure of InGaAs/InGaAsP SL-MQW and annealing at H 2/N 2 mix ing gas,and found that the strain in the active region of InGaAs/InGaAsP SL-MQW can lead QW intermixing more effectively.
出处
《光电子．激光》
EI
CAS
CSCD
2000年第3期255-257,共3页
Journal of Optoelectronics·Laser
基金
"八六三"计划资助项目![863 -3 0 7-11-1( 15 ) ]
