摘要
以SeO2,CdCl2.5/2H2O,H2SO4为原料,采用三电极体系,分别在ITO玻璃和TiO2纳米管阵列基底上沉积CdSe薄膜。研究了不同沉积电压(-0.6,-0.7,-0.8,-0.9V,均相对于SCE)下制备的复合薄膜的晶体结构和微观形貌,并测试了其光电性能。结果表明:制备出的纳米粒子呈不均匀团聚状态;随沉积电压的增大,光吸收增强,光响应电流增大,在沉积电压为-0.8V时复合薄膜的光响应电流达到最大值,但此沉积电压下的薄膜容易剥落。综合考虑薄膜质量和光响应电流,沉积电压为-0.7V时制备的复合薄膜最佳。
CdSe thin films were fabricated on ITO glass substrate and TiO2 nanotube arrays by electro- chemical method in a three-electrode system in electrolyte containing SeO2, CdC12 ~ 5/2H20 and H2SO4 at room temperature. The crystalline structure and morphology of the composite films pre- pared under different deposited potentials （- 0.6, - 0.7, - O. 8, - O. 9V, vs SCE） were investigated, and the optical properties of the composite films were measured. The results show that the prepared CdSe nanoparticles are agglomerated inhomogeneously, The optical absorption and photoelectric cur- rent of composite films are enhanced with the deposited potential increasing. The film deposited under -0.8V exhibits the maximum photoelectric current, but it is easy to peel from the substrate. Accord- ing to the fastness and photocurrent response of the composite film, the suitable deposition voltage is around -0.7V for obtaining the optimum film.
出处
《材料工程》
EI
CAS
CSCD
北大核心
2013年第1期21-24,共4页
Journal of Materials Engineering
基金
国家自然科学基金资助项目(51175363)
山西省科技攻关基金(20090321071)
太原理工大学校青年基金(K201013)
