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Bi_4Si_3O_(12)-Bi_4Ge_3O_(12)赝二元系统析晶行为及其晶体生长 被引量:2

Crystallization Behavior of Bi_4Si_3O_(12)-Bi_4Ge_3O_(12) Pseudo-binary System and Its Crystal Growth
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摘要 本文采用固相合成方法制备了Bi4(GexSi1-x)3O12(BGSO)固溶体(x=0~0.4),研究了它的固溶特性和析晶行为。实验结果表明,不同组成混合料在900℃左右固相反应能生成BGSO纯相;XRD分析显示,在x=0~0.4区间内,Bi4Si3O12和Bi4Ge3O12可以完全互溶,其晶格常数随x的增加呈线性增长。采用坩埚下降法生长了x=0.15组成的BGSO混晶,获得了透明晶体,并测试了晶体的光学性能。 Bi4( GexSi1-x)3O12 (BGSO)solid solutions with x = 0-0.40 have been prepared by solid reaction method. The crystallization behavior was investigated. Pure BGSO phase was obtained when the mixtures of Bi203, GeO2 and SiO2 were sintered at about 900 ℃. XRD patterns showed that Bi4Si3O12 and Bi4Ge3 O12 completely dissolved into each other and the lattice increased linearly with x value. BGSO crystal with x = 0. 15 was grown successfully by the modified vertical Bridgman method. Transparent crystal was obtained and its optical properties were measured.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2013年第1期13-16,共4页 Journal of Synthetic Crystals
基金 国家973前期专项(2011CB612310) 上海市科委基础研究重点项目(11JC1412400) 上海市教委重点学科(J51504)
关键词 Bi4Si3O12-Bi4Ge3O12 析晶行为 坩埚下降法 晶体生长. Bi4Si3O12 Bi4Ge3 O12 crystallization behavior vertical Bridgman method crystal growth
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