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SnO_2/Fe_2O_3多层薄膜与SnO_2单层薄膜特性差异的研究 被引量:4

Investigation of Property Differences Between SnO_2 Films and SnO_2/Fe_2O_3 Multilayer Films
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摘要 用等离子体化学气相淀积法制备的SnO_2/Fe_2O_3多层膜的一些电学特性和气敏特性不同于SnO_2单层膜.当SnO_2层的沉积时间很短时,多层膜在空气中及在敏感气氛中的电导随沉积时间的增加而下降.多层膜的响应及恢复时间也呈现一些反常的变化.本文提出一个包括过渡层在内的模型用以解释这些现象.过渡层可在沉积过程中产生,存在于SnO_2与Fe_2O_3界面附近,其厚度达30nm数量级. Some electrical and gas sensing properties of SnO_2/Fe_2O_2 multilayer films prepared byplasma CVD are different from that of monolayer SnO_2 films. When the time for depositingSnO_2 layer is short, the conductance of the multilayer films in air and in sensing gas ambienmay decrease with increase of the deposition time for the multilayer films. The response timealso shows abnormal variation when the deposition time is changed for the multilaryer films. Amodel including a transition layer, which may be produced during the plasma process, withthe order of 30 nm existing near the interface between SnO_2 and Fe_2O_3 layers has been sug-gested to elucidate the phenomena.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1991年第7期423-429,共7页 半导体学报(英文版)
基金 国家自然科学基金
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