摘要
本文讨论了InP/InGaAsP/InGaAs/InP SAGM-APD结构的抗回熔生长,并解决了InP在InGaAs上液相外延生长时的回熔问题。同时,研究了各外延层参数的控制。结果制得的器件,其最大雪崩倍增20,0.9V_B下暗电流14nA,响应度大于0.6A/W。
The anti-meltback growth of InP/InGaAsP/InGaAs/InP layers for SAGM-APD is discussed. Problem of meltback during LPE growth of final InP on InGaAs is solved. The parameter control for each layer is investigated. As a result, SAGM-APD has maximum avalanch gain of 20, dark current of 14nA at 0.9V_B, and responsivity over 0.6A/W.
出处
《半导体光电》
CAS
CSCD
北大核心
1991年第2期141-145,共5页
Semiconductor Optoelectronics
