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Simulation Study of the Electron and Hole Transport in a CNTFET

Simulation Study of the Electron and Hole Transport in a CNTFET
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摘要 In this work we have investigated electron and hole transport through zig zag carbon nanotubes by solving Boltzmann Transport Equation(BTE).We find that the mobility of electrons is rather greater than holes.Carbo nanotubes with longer diameter can carry higher current.Normally,transport of electrons(or holes) is dominated by scattering events,which relax the carrier momentum in an effort to bring the conducting material to equilibrium.
作者 A.Bahari M.Amiri
机构地区 Department of Physics
出处 《Communications in Theoretical Physics》 SCIE CAS CSCD 2013年第1期121-124,共4页 理论物理通讯(英文版)
关键词 TRANSPORT NANOTUBES BTE 空穴传输 电子 模拟 碳纳米管 玻耳兹曼 导电材料 迁移率 运输
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