摘要
分析了磷硅镉(CdSiP2)多晶合成过程中产生爆炸的原因。采用双层石英安瓿作为反应容器和低温区域在炉管中部的合成炉。在合成低温阶段采用气相输运技术使原料分步反应,防止P蒸气压过高引起爆炸,在合成高温阶段采用机械振荡与熔体温度振荡相结合的方法使元素化合反应充分、完全,避免了合成中间产物聚集引起容器爆炸,成功合成出了完整、光滑、致密的CdSiP2多晶锭。采用X射线衍射(XRD)对多晶锭进行分析,结果表明:合成材料为高纯单相的CdSiP2多晶体,为CdSiP2单晶体的生长奠定了可靠基础。
The causes of explosion in CdSiP2 polycrystalline synthesis process were analyzed.Double-wall quartz ampoule was used as the reaction vessel and the synthetic furnace with a lower cold zone in the central part was adopted.In the low temperature stage of synthesis,the technique of low temperature vapor transport（LTVT） was adopted to put raw materials into stepwise reaction in order to avoid excessive pressure of gaseous phosphorus which may lead to explosion.In the high temperature stage of synthesis,mechanical oscillation and melt temperature oscillation were introduced for a complete reaction in order to avoid intermediate products accumulation,which may lead to the rupture and explosion of the vessel.An integral,compact and homogenous CdSiP2 polycrystalline ingot was obtained successfully.X-ray Diffraction（XRD） analysis show that the products are high-purity and single-phase CdSiP2 polycrystals,which lay a reliable foundation for the CdSiP2 single crystal growth.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第6期1483-1487,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(51172149)
关键词
磷硅镉
双层石英安瓿
低温气相输运
CdSiP2
double-wall quartz ampoule
low temperature vapor transport
