摘要
介绍一种适用于脉冲功率领域的大功率半导体器件IGCT,简述IGCT器件及其结构,IGCT器件的通流能力强、di/dt高,适于脉冲功率领域应用。进行了脉冲放电的试验并讨论了IGCT的串联应用技术。
It introduced a power semiconductor（IGCT） applied in pulsed power,including the device and the structure.IGCT is suitable for pulsed power applications owing to high current and high di/dt capability.Pulse discharge test was completed and then applications of the IGCT in series were discussed.
出处
《大功率变流技术》
2012年第6期5-9,共5页
HIGH POWER CONVERTER TECHNOLOGY
