摘要
高长径比深孔阵列是微通道板、高分辨率X射线探测器、X射线二维光栅等器件的基本结构。基于制作大面积高长径比的深孔阵列目前仍是微纳制作技术面临的重大挑战。介绍了几种硅基微孔阵列的制作方法并分析了这几种方法的优劣。提出了用光助电化学刻蚀方法在硅基上制作大面积高长径比的深孔阵列,并从实验上研究了溶液浓度、温度、硅片掺杂浓度、光照条件、电流和电压等刻蚀过程参数对深孔微结构形貌的影响。最后给出了最佳刻蚀过程的实验参数,在整个5英寸(1英寸=2.54 cm)n型硅圆片上得到了长径比在40以上、有效圆面直径达110 mm的深孔阵列。
The deep pore arrays with high aspect ratio is the basic structure of the micro-channel plate, the high resolution X-ray detector and the two-dimensional X-ray grating device. In recent years, the fabrication of such deep pore arrays with high aspect ratio and large area is still a great challenge in micro- fabrication domain. Therefore, several fabrication methods of micro pore arrays on silicon wafer were introduced, and the advantages and disadvantages were analyzed as well. The method of fabricating the deep pore array with high aspect ratio and large area by the photo-assisted electrochemical etching technique was studied. Meanwhile, the process parameters which affected the morphologies of the deep micro pores were analyzed, such as the solution concentration, temperature, doping concentration of silicon, illumination, etching current and voltage. Finally, the optimal experimental parameters of the etching process were provided, and an array of deep pores with the aspect ratio of more than 40 on the 5 inch （ 1 inch = 2. 54 cm） silicon wafer is successfully fabricated with the effective diameter up to 110 mm.
出处
《半导体技术》
CAS
CSCD
北大核心
2013年第1期45-50,共6页
Semiconductor Technology
基金
国家自然科学基金项目(11074172
10774102)
深圳市科技研发资金重点实验室提升发展项目(CXB201005240011A)
关键词
光助电化学刻蚀
长径比
微制作
转换屏
微通道板
高分辨率
photo-assisted electrochemical etching
aspect ratio
micro-fabrication
scintillating screen
microchannel plate
high spatial resolution
