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衬底温度对氮化锌薄膜特性的影响 被引量:2

Effect of Substrate Temperature on the Properties of Zinc Nitride Thin Film
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摘要 采用直流磁控溅射的方法,在不同温度的玻璃衬底上生长Zn3N2薄膜.研究了衬底温度对样品的微结构、表面形貌以及光学性质的影响.结果表明,随着衬底温度的升高,生长的Zn3N2薄膜择优取向增多;晶粒尺寸逐渐变大;Zn3N2薄膜间接光学带隙由1.86 eV逐渐增大到2.26 eV. Zinc nitride thin films have been deposited on glass at different temperatures by using a DC magnetron sputtering system. Effects of substrate temperature on the mierostructure,surface morphology and optical properties of the films were investigated. The results indicate that the preferred orientations increase, the film grains get bigger, and the indirect transition optical band gap increases from 1.86 to 2. 26 eV with the increase of substrate temperature.
出处 《华南师范大学学报(自然科学版)》 CAS 北大核心 2012年第4期66-69,共4页 Journal of South China Normal University(Natural Science Edition)
基金 国家自然科学基金项目(61072028) 广东省自然科学基金项目(10151063101000048)
关键词 氮化锌薄膜 直流磁控溅射 表面形貌 光学带隙 zinc nitride films DC magnetron sputtering surface morphology optical band gap
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  • 1MA J, JI F, MA H L, et al. Preparation and properties of transparent conducting zinc oxide and aluminium - doped zinc oxide films prepared by evaporating method [ J ]. Solar Energy Materials and Solar Cells, 2000,60 (4) :341 -348. 被引量:1
  • 2孟华,梁建,赵君芙,赵国英.ZnO纳米结构的CVD制备工艺及其应用[J].材料导报,2011,25(5):23-27. 被引量:2
  • 3李述体,范广涵,周天明,孙慧卿,郑树文.氮化衬底对MOCVD生长GaN的影响[J].华南师范大学学报(自然科学版),2007,39(3):69-73. 被引量:3
  • 4符斯列,陈俊芳,吴先球,赵文峰,樊双莉,马涛.等离子体参数诊断及其特性研究[J].华南师范大学学报(自然科学版),2004,36(2):77-81. 被引量:14
  • 5TANG Z K, WONG G K L, YU P, et al. Room - tem- perature ultraviolet laser emission from self - assembled ZnO microcrystallite thin films [ J ]. Appl Phys Lett, 1998, 72(25) :3270 -3272. 被引量:1
  • 6KOBAYASHI A, SANKEY O F, DOW J D. Deep energy levels of defects in the wurtzite semiconductors A1N, CdS, CdSe, ZnS, and ZuO[J]. Phys Rev B, 1983, 28 (2) :946 -956. 被引量:1
  • 7WANG C, JI Z G, LIU K, et al. P - type ZnO thin films prepared by oxidation of Zn3 N2 thin films deposited by DC magnetron sputtering [ J ]. J Cryst Growth, 2003, 259 (3) :279 -281. 被引量:1
  • 8KURIYAMA K, TAKAHASHI Y, SUNOHARA F. Opti- cal band gap of Zn3N2 thin films[J]. Phys Rev B, 1993, 48 (4) :2781 - 2782. 被引量:1
  • 9FUTSUHARA M, YOSHIOKA K, TAKAI O. Optical properties of zinc oxynitride thin films [ J ]. Thin Solid Films, 1998, 317(1/2) :322 - 325. 被引量:1
  • 10FUTSUHARA M, YOSHIOKA K, TAKAI O. Structur- al, electrical and optical properties of zinc nitride thin films prepared by reactive rf magnetron sputtering [ J ]. Thin Solid Films, 1998, 322(1/2) :274-281. 被引量:1

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  • 1陈良尧,钱佑华.现代椭圆偏振光谱学研究和进展[J].物理,1995,24(2):75-80. 被引量:5
  • 2孙喜莲,洪瑞金,齐红基,范正修,邵建达.磁控溅射不同厚度银膜的微结构及其光学常数[J].物理学报,2006,55(9):4923-4927. 被引量:17
  • 3肖剑荣,徐慧,李燕峰,李明君.氮分压对氮化铜薄膜结构及光学带隙的影响[J].物理学报,2007,56(7):4169-4174. 被引量:4
  • 4Zhang J. , Xie E. Q. , Fu Y. J. , et al. Influence of temperature and nitrogen gas on zinc nitride thin films prepared by if-reactive sputtering[J]. Chinese Journal of Semiconductors, 2007, 28(8) : 1173 - 1178. 被引量:1
  • 5Kuiyama K., Takahashi Y., Sunohara F. Optical band gap of Zn3N2 film[J]. Physical Review B, 1993, 48(4) : 2781 -2785. 被引量:1
  • 6Nafiez C. G. , Pau J. L. , Hemt~dez M. J. On the true optical properties of zinc nitride [ J ]. Applied Physics Letters, 2011, 99 (23) : 1 -3. 被引量:1
  • 7Aperathitisa E. , Kambilafkaa V. , Modreanu M. Properties of n- type ZnN thin films as channel for transparent thin film transistors [J]. Thin Solid Films, 2009, 518(4): 1036-1039. 被引量:1
  • 8Sude T. , Kakishita T. Band-gap energy and electron effective mass of polyerystalline Zn3N2 [J].Journal of Applied Physics, 2006, 99(7) : 1 -3. 被引量:1
  • 9Kambilafkaa V. , Voulgaropouloub P. , Dounisb S. , et al. The effect of nitrogen on the properties of zinc nitride thin films and their conversion into p-ZnO:N films[ J]. Thin Solid Films, 2007, 515(24) : 8573 -8576. 被引量:1
  • 10Kambilaikaa V., Voulgaropouloub P., Dounisb S., et al. Thermal oxidation of n-type ZnN films made by d-sputtering from a zinc nitride target, and their conversion into p-type films [ J ]. Superlattices and Microstructures, 2007, 42(2) : 55 -61. 被引量:1

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