摘要
采用激光刻蚀,辅以化学溶液腐蚀对多晶硅片进行了表面织构。利用扫描电镜(SEM)、Helios LAB-rc反射率测试仪和Semilab WT2000少子寿命仪对样品进行了表征。结果表明,多晶硅表面经激光织构后表现出很好的陷光效果,反射率降低为8.0%。激光织构使硅片的少子寿命缩短,通过沉积Al2O3钝化薄膜可改善多晶硅片的电学性能。
Surface texturization of multicrystalline silicon wafers were prepared by laser etching and chemical solution corrosion. The samples were characterized by scanning electron microscopy （SEM）, Helios LAB -rc and Semilab WT2000. The results exhibit that the lowest reflection rate of the laser textured silicon surface is reduced to 8. 0% and the electrical performance of the wafer could be improved by depositing Al2O3 passivation layer.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2012年第24期16-18,22,共4页
Materials Reports
基金
国家自然科学基金(11104288)
宁波市自然科学基金(2011A610202)
关键词
多晶硅太阳电池
减反射
激光织构
multicrystalline silicon solar cells, anti-reflection, laser texturization
