摘要
为了研究薄膜硅光伏组件在高电压下的绝缘失效机制,建立了一个薄膜硅组件的漏电通道模型,并定量测试组件在湿热(damp heat,DH)实验前后各漏电通道的绝缘电阻,采用了独特的措施来避免各漏电通道之间的相互干扰,获得了较准确的结果。在DH实验之前,组件边缘的绝缘电阻比前后玻璃高20倍至2个数量级,前后玻璃处的漏电决定了组件绝缘性能。经过1 000 h的DH实验之后,边缘绝缘电阻大幅下降约2个数量级,成为小面积(300 mm×300 mm)组件绝缘性能的决定性因素,但是在大面积(1 300 mm×1 100 mm)组件中,前后玻璃在很多情况下仍是组件漏电流的主要通道。
Abstract： An electric leakage path model was built to investigate the insulation failure mechanism of thin film silicon solar modules under high electric potential. The insulation resistance of each leakage path was quantitatively measured with high accuracy before and after damp heat （DH） test. Unique measures were taken to avoid the mutual interference among the electric 1 tion resistance on the module eakage paths, and accurate results were achieved. Before the damp heat test, the insulaedge is 20 times, even 2 orders of magnitude higher than that on the front and back glasses, therefore the leakages on the front and back glasses determine the total module insulation resistance. After a 1 000 hDH test,the insulation resistance on the module edge greatly decreases by about two orders of magnitude, which makes itself to be a decisive factor in small size modules （300 mm × 300 mm）. However,the currents flowing through front and back glasses are still the main contributor to the total leakage current in full size modules （ 1 300 mm ×1 100 mm） in many cases.
出处
《仪器仪表学报》
EI
CAS
CSCD
北大核心
2012年第11期2454-2459,共6页
Chinese Journal of Scientific Instrument
基金
国家973计划(2011CBA00700)
保定天威集团研发项目(RD1116)资助
关键词
薄膜光伏组件
漏电通道
绝缘电阻
定量测量
thin film silicon solar module
electric leakage path
insulation resistance
quantitative measurement
