摘要
We show the formation of tunneling-induced ultraslow bright and dark solitons in an asymmetric double-quantum- well structure based on the tunneling induced transparency. In this semiconductor structure, the pump field is replaced by the electron-tunneling coupling, which can be modulated by a static electric field. With appropriate conditions, we demonstrate by modulating the intensity of the static electric field that the interplay between the group velocity dispersion and the self-Kerr nonlinearity results in the generation of dark and bright solitons with ultraslow group velocity.
We show the formation of tunneling-induced ultraslow bright and dark solitons in an asymmetric double-quantum- well structure based on the tunneling induced transparency. In this semiconductor structure, the pump field is replaced by the electron-tunneling coupling, which can be modulated by a static electric field. With appropriate conditions, we demonstrate by modulating the intensity of the static electric field that the interplay between the group velocity dispersion and the self-Kerr nonlinearity results in the generation of dark and bright solitons with ultraslow group velocity.
基金
Project supported by the National Natural Science Foundation of China (Grant Nos. 11104176 and 11104174)
the Natural Science Foundation of Shaanxi Province,China (Grant No. 2011JQ1008)
the Fundamental Research Funds for the Central University,China (Grant Nos. GK201003003 and GK201002024)
the Open Fund from the SKLPS of ECNU,China
