摘要
设计制造了快速灯光退火装置,对灯光退火装置的退火均匀性作了理论计算,将灯光退火均匀性的计算结果与作者自行设计的装置所得的实验结果进行比较.结果表明,作者应用自己提出的计算方法设计制造的灯光通火装置各项指标都达到设计要求.此装置能快速、均匀、有效地对半导体中由于离子注入造成的晶格损伤进行退火,并能用于其他半导体热处理工艺.
In. this paper, the authors designed and constructed a lamp annealing apparatus and compared the experimental results with the theoretical calculation on the uniformity, indicating that all design demands can be met. This apparatus can fast, effectively and uniformly eliminate the ion implatation-induced lattice damage in semiconductors by annealing and is also useful for other thermal processes of semiconductors.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1990年第4期374-378,共5页
Research & Progress of SSE
