摘要
讨论了 SIT(静电感应晶体管 )的基本电性能参数以及它们之间的关系 .通过这些电参数对器件 I- V特性的影响 ,系统地研究了为改善器件电性能应对各参数进行怎样的调控 ,以便为在SIT的制造中调整好器件的结构。
The fundamental electrical parameters of SIT and their relations are discussed. How to control these parameters is stated systematically, so the property of devices can be improved on the basis of these parameters and their effect on the I V performance. Moreover, the theory about how to adjust the structure, the procedure of manufacture, and the materials concerned during the process of SIT fabrication has been founded.
出处
《兰州大学学报（自然科学版）》
CAS
CSCD
北大核心
2000年第2期37-43,共7页
Journal of Lanzhou University(Natural Sciences)
基金
甘肃省"九五"科技攻关重点!(JX-9742-48A)资助项目
