摘要
ZnO薄膜材料作为一种新兴的材料,在半导体光电子领域有着广泛的应用前景。本文利用磁控溅射法在Si衬底上先生长一层Mo缓冲层,然后在Mo缓冲层上制备ZnO薄膜。通过性能对比发现,Mo缓冲层对于ZnO的结晶性能和发光性能的提高具有明显的改善作用。
As a new material,ZnO thin film material has a wide range of applications in the semiconductor photoelectric industry.By using the magnetron sputtering method,a layer of Mo buffer layer is grown on Si substrate,and then ZnO film is grown on it.Compared with the ZnO film which has been directly grown on the Si substrate,the crystal quality and optical property are improved by Mo buffer layer.
出处
《中国钼业》
2012年第5期37-40,共4页
China Molybdenum Industry
