期刊文献+

溶液浓度对ZnO纳米棒形貌和发光的影响

Effect of solution concentration on the morphology and photoluminescence of ZnO nanorods
下载PDF
导出
摘要 为了获取高质量、高取向排列规则的ZnO纳米棒,玻璃衬底预先用脉冲激光沉积方法制备一层ZnO薄膜作为籽晶层,应用水热法在玻璃衬底上生长ZnO纳米棒。探究了籽晶层及不同溶液浓度对ZnO纳米棒结构和发光的影响,用扫描电子显微镜和X射线衍射仪测量样品的形貌和结构,用组建的光致发光测试系统对样品的室温光致发光光谱进行测定。结果表明,ZnO纳米棒具有高度取向且分布致密均匀;光致发光光谱显示ZnO的近带边发射比深能级发光略低;随着溶液浓度的增加,近带边发光和深能级发光相对强度的比值依次降低。 In order to prepare high-quality, high-orientation, high-density, well-aligned ZnO nanorods, firstly, ZnO seed layers were prepared on glass substrates by means of pulsed laser deposition ( PLD ) , then ZnO nanorods were prepared on the glass substrates with hydrothermal method. The role of the seed layer was explored and effects of different solution concentration on structure and photoluminescence (PL) properties of ZnO nanorods were investigated. The morphology and structure of the samples were measured by scanning electron microscope(SEM) and X-ray diffraction(XRD). The PL spectra of the workpieces were measured with an established photolumineseence test system. SEM and XRD results show that ZnO nanorods have highly orientation, distribution compact uniform. The excitons emission is slightly lower than the deep level luminescence. As the solution concentration increasing, the ratio of exciton and deep level luminescence relative intensity decreases in order.
出处 《激光技术》 CAS CSCD 北大核心 2012年第6期776-779,共4页 Laser Technology
关键词 薄膜 光致发光 水热法 脉冲激光沉积 ZNO纳米棒 thin films photoluminescence hydrothermal method pulsed laser deposition ZnO nanorods
  • 相关文献

参考文献16

  • 1ZU P, TANG Z K, WONG G K L, et al. Uhraviolet spontaneous and stimulated emissions from ZnO microerystallite thin films at room tem- perature [ J . Solid State Communications, 1997,103 ( 8 ) :459 -463. 被引量:1
  • 2LI Q H, LIANG Y X, WAN Q, et al. Oxygen sensing characteristics of individual ZnO nanowire transistors [ J]. Applied Physics Letters, 2004,85 (26) :6389-6391. 被引量:1
  • 3AHN S E, LEE J S, KIM H, et al. Photoresponse of sol-gel-synthe- sized ZnO nanorods [ J ]. Applied Physics Letters, 2004,84 ( 24 ) : 5022 -5024. 被引量:1
  • 4McCLUSKY M D, JOKELA S. Defects in ZnO [J]. Journal of Ap- plied Physics ,2009,106 (7) : 071101/1-071101/13. 被引量:1
  • 5赵涛,李清山,董艳锋,张立春,解晓君.氧压对PLD制备掺铜ZnO薄膜光学性质的影响[J].激光技术,2011,35(6):781-783. 被引量:2
  • 6YANG Z, CHU S, CHEN W V, et al. ZnO:Sb/ZnO:Ga light emit- ting diode on c-plane sapphire by molecular beam epitaxy [ J ]. Ap- plied Physics Express ,2010,3 ( 3 ) : 032101/1-032101/3. 被引量:1
  • 7REMASHAN K, CHOI Y S, PARK S J, et al. Enhanced perform- ance of MOCVD ZnO TFTs on glass substrates with nitrogen-rich sili- con nitride gate dielectric [ J]. Journal of the Electrochemical Society, 2010,157 ( I ) : H60-H64. 被引量:1
  • 8TIAN Z R, VOIGT J A, LIU J, et al. Complex and oriented ZnO nanostructures [J]. Nature Materials,2003,2(12) : 821- 826. 被引量:1
  • 9VAYSSIERES L. Growth of arrayed nanorods and nanowires of ZnO from aqueous solutions [ J ]. Advanced Materials, 2003, 15 (5) : 464-466. 被引量:1
  • 10LI Q W, BIAN J M, WANG J W, et al. Hydrothennal prepare co- doped ZnO nanorods and optical properties [ J ]. Chinese Journal of Luminescence,2010,31 (2) : 253-256(in Chinese). 被引量:1

二级参考文献6

共引文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部