摘要
计算了HgCdTe/CdTe/Si(211)异质结构的应变和应力分布,发现对于生长方向为不具有对称特性的[211]晶向,由于弹性模量的各向异性,平行表面的两个晶向方向[1-1-1]和[01-1]的应变和应力分布存在差异,并且二者的曲率半径也具有相应特性。对于Si衬底厚度为500μm,CdTe缓冲层厚度为10μm,HgCdTe层厚度为10μm的异质结构,液氮温度77 K时衬底与外延层的应变均为负值,外延层和衬底的最大应力值均在界面处,外延层中均为张应力,Si衬底在靠近界面处为压应力,远离界面逐渐过渡为张应力,存在一个应力为零的中性轴位置。
The strain and stress distribution in HgCdTe/CdTe/Si（211） heterostructure （Si 500μm, CdTe 10μm, HgCdTe 10 μm） were described by theoretical calculation. The results show that the strain and stress profiles and curvature radius of HgCdTe/CdTe/Si oriented in asymmetry [211] direction, are asymmetric along in-plane direction of [1-1-1] and [01-1]. The strain of epilayer and substrate are both negative at 77 K. The stress at the interface is the largest in this heterostructure. The stress in epilayer is tensile while in substrate it is compressive on the side of interface and tensile on the other side. The neutral surface of stress profile is in the Si substrate.
出处
《红外与激光工程》
EI
CSCD
北大核心
2012年第10期2594-2599,共6页
Infrared and Laser Engineering
基金
国家自然科学基金(61050007)
福建省教育厅科技项目(JA10249)
中国科学院红外成像材料与器件重点实验室开放课题(IIMDKFJJ-11-04)
