摘要
以惰性盐为分散剂,通过直接氮化金属镓与氟化钙的混合物,在较低温度下(650℃)大量合成出角面截面型氮化镓纳米棒,大大低于以往文献报道的氮化温度(900℃以上)。通过X射线衍射和电子显微镜等设备表征,可知所制得的产物为六方相氮化镓纳米棒,且纳米线沿着c轴择优生长;每根氮化镓纳米棒都具有菱形或三角形截面。由于本方法的制备温度低,导致了氮化镓纳米棒与硅基片的良好接触。场发射实验表明,该复合系统具有很低的开启电压(5.4V/μm)和阈场(8.4V/μm)。
Inert salt- assisted route has been developed to prepare gallium nimde nanoreds on Au- coated Si substrate through di- rectly nitriding Ga - CaF2 mixture with NH3/N2 at 650 ℃, about 250 ℃ lower than previous literature reports. X- ray diffraction indicates the as- prepared products consist of hexagonal GaN nanorods and grow preferentially along c - axis. Scanning electron microscopy shows the as - prepared CaN nanoreds having rhombie and triangular cross - sections. Quite good field oission prop- erty is obtained due to the natural integration of the GaN nanoreds and the canmmnly - used Si subsume in this mild prepamtion; which suggests the potential applications.
出处
《上饶师范学院学报》
2012年第3期56-61,共6页
Journal of Shangrao Normal University
基金
supported by the scientific research items of University from Ministry of Education(TS11524)
JXPNSF(20114BAB203003)
NSFC(21161016)
关键词
氮化镓纳米棒
低温合成
CVD
场发射
GaN nanorods
low temperature synthesis
CVI）
field emission.
