摘要
本文提出了一个新型的SOI埋层结构SOANN(silicon on aluminum nitride with nothing),用AIN代替传统的SiO2材料,并在SOI埋氧化层中引入空洞散热通道.分析了新结构SOI器件的自加热效应.研究结果表明:用AIN做为SOI埋氧化层的材料,降低了晶格温度,有效抑制了自加热效应.埋氧化层中的空洞,可以进一步提供散热通道,使埋氧化层的介电常数下降,减小了电力线从漏端通过埋氧到源端的耦合,有效抑制了漏致势垒降低DIBL(drain Induced barrier lowering)效应.因此,本文提出的新型SOANN结构可以提高SOI器件的整体性能,具有优良的可靠性.
In this paper, we present a new silicon-on-insulator （SO1） buried oxide structure, i.e., silicon on aluminum nitride with nothing （SOANN）. In the novel structure, the traditional SiO2 is replaced by A1N, and gas cavity is constructed in the SOI buried oxide. The self-heating effect of novel SOI device is analyzed. The result shows that using A1N as a buried oxide, the temperature of lattice and the effectively restrained self-heating effect can decrease. In addition, the gas cavity in the buried oxide can provide a heat emission passage and reduce the dielectric constant. The coupling effect of electric field lines from drain to source is weakened, and the drain induced barrier lowering effects is effectively restrained. Therefore, this new SOANN structure can improve the performance of the SOI devices, and provide high reliability as well.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2012年第17期470-475,共6页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60976068
60936005)
教育部科技创新工程重大项目培育资金项目(批准号:708083)
教育部博士点基金(批准号:200807010010)资助的课题~~
