摘要
ELF （extremely low frequency） magnetic fields from power-line current influence the yield of CMOS foundry. The poor yield happens because of ELF magnetic fields inducing directly the measurement or process equipment for cutting-edge chips below 28 nm process. The equipments of electron microscopes, including SEM （scanning electron microscope）, TEM （transmission electron microscopy）, STEM （scanning transmission electron microscopy） and EBLS （electron beam lithography system） are very susceptible to ELF magnetic fields emanating from various electrical power sources outside of the building and within next generation CMOS foundry recommends a maximum of 0.3 mG. The active canceling method uses active coils with current sensing field via sensor and inducing man-made electromagnetic field to reduce the stray magnetic field. Unfortunately, the conventional system takes more time to products field because of parasitical capacitance and resistance in long coil. The longer canceling coil the system construct, the more time it takes. Besides, canceling system should spend more time on calibrating non-linear current amplifier through software design. This research designs simpler anti-electro-magnetic system instead of typical frame and develops one turn canceling coil structure to reduce delaying time. Several parallel cells generate field up to 23.81 mG controlled by MPU （micro processor unit）. This system decreases the power-line inducing filed below 0.3 mG.
