摘要
[目的]研究N+离子束注入对生防菌枯草芽孢杆菌存活率和突变率的影响。[方法]对离子束注入前样品处理方法进行优化,包括枯草芽孢杆菌液体培养时间、稀释浓度、稀释溶剂和菌膜干燥时间;采用N+离子束注入进行诱变处理,并通过平板对峙法和牛津杯法筛选菌株。[结果]N+离子束注入样品前处理最佳条件为:枯草芽孢杆菌液体培养20～24 h,利用无菌水将菌液稀释到106个/ml,菌膜干燥时间为0～60 min;离子束注入诱变的最佳条件为:注入能量30 kev,剂量为2×1014～4×1014ions/cm2,枯草芽孢杆菌存活率为8.43%～26.71%,突变率为3.50%～5.43%。[结论]该研究结果为枯草芽孢杆菌离子束注入诱变育种方法的研究提供了参考依据,同时也为其他生防菌的辐射诱变育种奠定了基础。
[Objective] This study was to investigate the effect of N＋ ion beam implantation on the survival rate and mutation rate of biocontrol strain Bacillus subtilis.[Method] The factors influencing Bacillus subtilis ion beam implantation,including culture time,dilute concentration,solvent,drying time of bacterial membrane were optimized.Bacillus subtilis cells were implanted by using ion beam at 0.2×1014-10×1014 ions/cm2 dose and the energy of 30 kev.Then the methods of culturing colonies confronting each other on plate and Oxford cup diffusion were used to screening strains.[Result] The optimal parameters were found as follows： culture in liquid for 20-24 h,dilution with sterile water to 106 cfu/ml and drying of 60 min for sample preparation;the optimal N＋ ion beam implantation dose of 2×1014-4×1014 ions/cm2 at the energy of 30 kev,the survival rate of 8.43%-26.71% and the mutation rate of 3.50%-5.43%.[Conclusion] This study provided reference for ion beam implantation mutation of Bacillus subtilis.
出处
《安徽农业科学》
CAS
2012年第25期12382-12385,共4页
Journal of Anhui Agricultural Sciences
基金
北京市科学技术研究院"萌芽计划"项目(022)
关键词
离子注入
存活率
突变率
枯草芽孢杆菌
Ion beam implantation
Survival rate
Mutation rate
Bacillus subtilis
