摘要
采用微波等离子体化学气相沉积法（MPCVD），使用高纯N2（99．999％）和CH4（99．9％）作反应气体，在多晶Pt（9．99％）基片上沉积C3N4薄膜X射线能潜（EDX）分析结果表明N／C原子比为1．0～1．4；接近C3N4的化学比；X射线衍射谱（XRD）说明薄膜生要由β-和α-C3N4组成；X射线光电子谱（XPS）、傅立叶变换红外谱（FT－IR）和喇曼（Raman）谱说明在C3N4薄膜中存在C－N键.
C3N4 thin films have been prepared on Pt substrates by microwave plasma chemical vapor deposition (MPCVD) method. Energy dispersive X-ray (EDX) analysis showed that N/C ratios of the films were about 1.0~1.4, close to the stoichiometric of C3N4. X-ray diffraction (XRD) results showed that the films consisted of β- and α-C3N4. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FT-IR) and Raman spectroscopy supported the existence of C-N single bond.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2000年第3期311-314,共4页
Chinese Journal of Materials Research
基金
国家自然科学基金!19674009
