摘要
提出一种氧的等离子氧化的方法改善结区边缘绝缘性能,降低超导隧道结的漏电流。对Al膜进行等离子氧化能够有效的改善氧化膜的绝缘性能,AES分析表明:氧化绝缘层均匀,界面清晰;应用此方法成功制备出较好性能的Nb隧道结。
A new method of oxidization for fabricating Nb Josephson junction with low leakage current was reported, which could improve the oxidation around the tunnel barrier effectively ： the Al film conducted by plasma oxidation of oxygen ions with the help of RIE could improve the oxide quality of the film, and enforce the insulation property. The AES analysis shows that the oxide layer is uniform, the interface is clear. High quality junctions were fabricated.
出处
《低温与超导》
CAS
CSCD
北大核心
2012年第7期35-38,共4页
Cryogenics and Superconductivity
基金
国家自然科学基金(61027008
11074114)
国家重点基础研究发展计划项目(2011CBA00202)资助项目
关键词
超导隧道结
等离子氧化
阳极氧化
制备工艺
Superconductivity tunnel junction, Plasma oxidation, Anodization, Fabrication process
