摘要
通过对流量传感器制造工艺中微薄膜结构的研究,分别介绍了采用氢氧化钾和四甲基氢氧化铵(TMAH)交替腐蚀实现感应薄膜释放的基本原理、工艺方法、工艺参数,及在制作流量芯片中的具体应用实例,实现了微米级厚度薄膜释放,为流量传感器和其它需要超薄薄膜微结构的制作奠定了基础。
Basic principles, process methods and process parameters of inducting films release by alternative etching of K0H and TMAH, and some specific applications in fabricating flow chips are introduced respectively by studying micro film structure in manufacturing process for flow sensor. Microsized film release is realized and fabricating foundation for flow sensor and other micro structure with ultra-thin film is established.
出处
《信息技术》
2012年第6期108-110,共3页
Information Technology
