摘要
本文首先从器件有源区耗尽过程分析表明AlGaN/GaN HEMTs器件具有与传统Si功率器件不同的耗尽过程,针对AlGaN/GaN HEMTs器件特殊的耐压机理,提出了一种降低表面电场,提高击穿电压的新型RESURF AlGaN/GaN HEMTs结构.新结构通过在极化的AlGaN层中引入分区负电荷,辅助耗尽二维电子气,有效降低了引起器件击穿的栅极边缘高电场,并首次在漏极附近引入正电荷使漏端高电场峰降低.利用仿真软件ISE分析验证了AlGaN/GaN HEMTs器件具有的"虚栅"效应,通过电场和击穿特性分析获得,新结构使器件击穿电压从传统结构的257V提高到550V.
A result is obtained in this paper first of all the depletion process is different from the silicon power device in the AlGaN/GaN HEMTs by analyzing the active region depletion. Based on this special breaking principle in the AlGaN/GaN HEMTs, a new RESURF AlGaN/GaN HEMTs structure is proposed to decrease the surface electric field and increase the breakdown voltage. In this structure, two different negative charge regions are introduced into the polarization AlGaN layer to decrease the high edge electric field by depleting 2DEG helpfully. The positive charge is added to the near drain electrode to decrease the high electric field peak of the drain for the first time. By applying the ISE simulation software, the Virtual Gate effect is verified in the AlGaN/GaN HEMTs. The breakdown voltage is improved from 257 V of the conventional structure to 550 V in the proposed structure.
出处
《中国科学：信息科学》
CSCD
2012年第6期770-777,共8页
Scientia Sinica(Informationis)
基金
国家自然科学基金(批准号:61106076)资助项目
