摘要
利用负电容电路补偿技术,设计了一个工作于2.4GHz频段的差分低噪声放大器。基于CHRT 0.25μm RF CMOS工艺,对电路进行仿真。与传统的共源共栅结构相比,引入负电容电路对共源管的栅漏寄生电容进行补偿,可以使放大器的匹配度、噪声系数、线性度等关键性能指标得到显著改善。仿真结果显示,该放大器的正向功率增益为17.7dB,噪声系数为1dB,IIP3为-4.9dBm,功耗为25mW,具有良好的输入输出匹配。
A low noise amplifier （LNA） operating at 2.4 GHz band was designed using negative capacitance cir cuit （NCC） compensation. The circuit was implemented in CHRT 0. 25μm RF CMOS process. Compared with the conventional cascode LNA, a negative capacitance circuit was used in the new I.NA to compensate gate-drain para- sitic capacitance of the common source stage, which significantly improved key parameters of the amplifier, such as matching, noise figure and linearity etc. Simulation results showed that the I.NA had a forward power gain of 17.7 dB, a noise figure of 1 dB, an IIP3 of 4.9 dB, and good input/output impedance matching, while consuming 25 mW of power.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第3期318-322,326,共6页
Microelectronics
基金
浙江省自然科学基金资助项目"无线通信系统无源互调产生机理及测试方法研究"(Y1110082)
关键词
低噪声放大器
负电容电路
CMOS
Low noise amplifier （I.NA）
Negative capacitance circuit （NCC）
CMOS
