摘要
文章研究了CMOS器件 (LC54HC0 4RH) 6 0 CoΥ射线的总剂量辐照实验以及辐照后在 1 0 0℃温度场下的退火效应。实验发现 ,辐照后 ,器件在加温和加偏条件下 ,可以加速n沟器件界面态的增长和氧化物陷阱电荷的退火 ,而加温浮空偏置条件下有利于n沟器件界面态的退火 ;但在 1 0 0℃温度场中 ,两种偏置条件都有利于p沟器件氧化物陷阱电荷和界面态的退火。
In this study the experiments of radiation damage and annealing effects at 100℃ were carried out for CMOS devices (LC54HC04RH). The results show that, after radiation, high temperature and positive bias conditions may enhance the increase of the interface traps and the annealing of oxide traps, while high temperature without bias can enhance the annealing of interface traps for n-MOs. Both two kinds of conditions are helpful to annealing of oxide traps and interface traps for p-MOS.
出处
《微电子学与计算机》
CSCD
北大核心
2000年第2期36-38,共3页
Microelectronics & Computer
