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一种带高阶温度补偿的片内时钟振荡器设计 被引量:4

Fully on-chip clock oscillator with higher-order temperature compensation
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摘要 本文基于0.18μm CMOS工艺,设计了一款适用于片上系统SoC的无需晶振的片内12MHz时钟信号产生电路。利用高阶温度补偿方案,该时钟振荡器能在较宽的温度范围内实现振荡频率的高稳定性。此外,电路的稳压器设计使得振荡器频率在电源电压变化时也能保持相当好的稳定性。仿真结果表明,在.40℃~125℃温度范围内,此振荡器振荡频率的温度系数仅为40ppm/℃,电源电压变化士10%时,振荡频率的相对误差仅为士0.012%,完全能够满足常规数字系统的要求。 A 12MHz clock oscillator without crystal suitable for SoC is designed in this paper in 0.18μm CMOS process. It gets high stability by means of higher-order temperature compensation/regulator in the wide temperature range/voltage range. The simulation results show that the temperature coefficient is just 40ppm/℃ across a temperature range of -40℃-125℃ and the relative error is -4-0.012% for a supply voltage range of 3V-3.6V.
出处 《电路与系统学报》 CSCD 北大核心 2012年第3期31-36,共6页 Journal of Circuits and Systems
关键词 CMOS 环形振荡器 无晶振 高阶温度补偿 CMOS ring oscillator crystal-free higher-order temperature compensation
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