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膜去溶进样高分辨电感耦合等离子体质谱法测定半导体级氢氟酸中杂质元素 被引量:4

Determination of Impurity Elements in Semiconductor-grade Hydrofluoric Acid by High-resolution Inductively Coupled Plasma Mass Spectrometer(HR-ICP-MS) with Membrane Desolvation
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摘要 利用高分辨电感耦合等离子体质谱法测定半导体级高纯氢氟酸中的痕量金属杂质,用膜去溶进样系统直接进样检测,无需前处理、快速,避免了在样品前处理时的污染问题。高分辨电感耦合等离子体质谱法可以消除多分子离子干扰,降低检出限,提高定量准确性。方法的检出限为0.09~37.07ng/L,加标回收率为92.3%~116.8%。方法简单,结果可靠,适用于高纯氢氟酸中痕量元素的快速测定。 Trace metal impurities in semiconductor-grade hydrofluoric acid were determined by a high-res- olution inductively coupled plasma mass spectrometer coupled with a membrane desolvating sample intro- duction system. Through the membrane desolvating sample introduction system, samples were directly an- alyzed without any sample pretreatment, which improve the speed and avoid the contamination that might be brought into the system in the sample pretreatment process. High resolution inductively coupled plasma mass spectrometry (HR-ICP-MS) can eliminate multi-molecule ion interferences, reduce detect limit and improve quantitative accuracy. The detection limits were in the range of 0.09 to 37.07 μg/L with the standard addition recoveries of 92.3% to 116.8 %. The experimental results show that the method is sim- ple and gives reliable results, thus, suitable for rapid determination of trace elements in semiconductor- grade hydrofluoric acid.
作者 陈黎明
出处 《中国无机分析化学》 CAS 2012年第2期61-64,共4页 Chinese Journal of Inorganic Analytical Chemistry
基金 国家科技部资助项目(2009IM032300)
关键词 膜去溶 半导体级氢氟酸 高分辨电感耦合等离子体质谱 杂质元素 membrane desolvation semiconductor-grade hydrofluoric acid high-resolution inductively cou-pled plasma mass spectrometry (HR-ICP-MS) ~impurity element
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