摘要
研究了一种具有OB(Oxide By-passed)结构的SOI LDMOS器件,分析了该器件的耐压机理以及结构特点,并通过SILVACO TCAD软件对该结构进行三维数值仿真。通过仿真验证可知,该结构通过类超结(SJ)电场调制技术获得了与超结器件类似的性能,该结构与SJ LDMOS在相同的尺寸情况下尽管耐压相同,但导通电阻从3.81mΩ.cm2降低到1.96mΩ.cm2,同时克服了SJ LD-MOS器件制造工艺上高深宽比以及电荷浓度难易精确匹配的缺陷。
An SOI LDMOS device structure with Oxide By-passed（OB） was investigated and its breakdown mechanism and characteristic of structure was analyzed.Its performance was verified by three dimensional numeric simulation with SILVACO TCAD software.The simulated results show that the electrical field element of the device is modulated by the technology of similar Superjunction（SJ） structure.Compared with the SJ LDMOS device,OB LDMOS achieved not only the same breakdown voltage,but also the specific on-resistance of the OB LDMOS reducing from 3.81mΩ·cm2 to 1.96mΩ·cm2,except for achieving comparable performance and overcoming the high aspect ratio of fabrication structure and difficulty of accurate concentration match of SJ LDMOS.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2012年第2期178-182,共5页
Journal of Functional Materials and Devices
基金
国家自然科学基金(No.60906038)
中央高校基本科研业务费专项资金资助(No.GK2080260104)
关键词
SOI结构
OB结构
导通电阻
电荷补偿
SOI structure
Oxide By-passed structure
on-state resistance
charge compensation
