摘要
从相变存储器(phase change random access memory,PCRAM)的基本结构和工作原理出发,首先介绍了PCRAM的技术优势、面临的技术挑战、常用的解决策略以及存在的相应问题;接着阐述了在微电子加工中广泛应用的关键工艺——侧墙技术,并将其在PCRAM中的应用成果进行了分类;然后从加热电极的制备、相变材料限制结构的制备、新相变材料的制备与表征和器件间互联等4个方面展开叙述;最后展望了该技术在相变存储领域应用发展的趋势。侧墙技术因其具备自对准的特点,制备工艺可控性好,制备精度不依赖于光刻精度,在纳米技术飞速发展的今天,侧墙技术将会在更高精度上发挥其作用。
According to the basic structure and working principle of the phase change random access memory（PCRAM）,the technical advantages challenges,common solution strategies and relative limits of the PCRAM are introduced firstly.Then,the spacer technology is described,it is the key process which is widely used in microelectronics fabrication,and the applications of the PCRAM fabrication are classified from four aspects as follows： heater electrode fabrication,phase change material confined structure fabrication,development and characterization of new phase change materials,and device interconnection.At last,the trends of application and development for the spacer technology in PCRAM are prospected.With the rapid development of nanotechno-logy,the spacer technology will play its role in the higher precision due to its self-alignment features,accurate process control and preparation precision independent of lithography precision.
出处
《微纳电子技术》
CAS
北大核心
2012年第5期328-335,共8页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(61106120)
