摘要
以In2O3和GeO2为原料,采用碳还原法制备了In2Ge2O7多晶薄膜,利用XRD和SEM对薄膜的结构和形貌进行了表征。对基于In2Ge2O7薄膜的金属-半导体-金属(MSM)紫外探测器进行了紫外光电导特性测量,结果显示:在波长为250nm的紫外光照射下,在5V偏压下,器件的光电流为727μA(暗电流为12μA),光响应度达到262.9A.W-1,光响应上升时间约为67s,下降时间约为15s。分析认为较长的响应时间是由于内部的缺陷与位错造成的。初步研究结果表明:In2Ge2O7薄膜可以作为一种良好的日盲紫外探测材料。
In2Ge2O7 thin film was prepared by carbothermal reduction method using In2O3 and GeO2 as raw materials.The properties were characterized by XRD,SEM.The characteristics of the In2Ge2O7 thin film based metal-semiconductor-metal（MSM） photodetectors show that the photo current was 727 μA and the dark current was 12 μA）,and a high responsivity of 262.9 A·W^-1 was achieved under 5 V bias when it was irradiated by the ultraviolet light（λ=250 nm）.The device show a slow time response with a rise time of 67 s and a decay time of 15 s.The authors deduced the slow time response was caused by the defect traps in the film.The preliminary results show that the In2Ge2O7 thin film is a promising candidate for the solar-blind photodetectors.
出处
《半导体光电》
CAS
CSCD
北大核心
2012年第2期204-206,共3页
Semiconductor Optoelectronics
关键词
In2Ge2O7薄膜
碳还原法
紫外探测器
In2Ge2O7 thin film
carbothermal reduction method
ultraviolet photodetector
