摘要
本文搭建了一套大气压等离子体薄膜沉积系统,其装置采用喷枪方式,结合运动机构控制喷枪按特定轨迹移动镀膜。四乙氧基硅烷(TEOS)作为硅的先驱体,氮气为先驱体载气和等离子体放电气体,基底温度50℃～300℃,进行了大气压等离子体化学气相沉积氧化硅薄膜的研究。运用红外光谱(FTIR)、光学椭偏仪,扫描电镜(SEM)和纳米压痕仪对沉积的薄膜进行了表征。研究表明,薄膜中富含Si—O—Si键且有少量S—OH键;较高基底温度有利于在硅基底上得到一层平整致密的薄膜;基底温度300℃时薄膜硬度达到4.8GPa,略低于采用PECVD方法沉积的氧化硅薄膜。
A non-equilibrium atmospheric-pressure plasma jet was developed.A kinetic controlling system was integrated to control the movement of plasma jet,which was used to deposit silicon oxide films.TEOS was used as the precursor.N2 gas was used to generate plasma and carry precursor.Substrate temperature was varied from 50℃ to 300℃.As-deposited films were characterized by ellipsometrry,Fourier transform infrared（FTIR） spectroscopy,scanning electron microscopy（SEM） and nano-indentometry.FTIR spectra indicate that there are a majority of Si-O-Si bonds and a minority of Si-OH bonds in the as-deposited films.Higher substrate temperature is contributive to depositing flat and compact films.Under substrate temperature 300℃,film hardness is up to 4.8GPa,which is slightly less than that of films deposited by plasma enhanced chemical vapor deposition（PECVD）.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2012年第2期241-244,266,共5页
Journal of Materials Science and Engineering
基金
浙江大学基本科研业务费专项资助项目(KYJD09014)
关键词
氧化硅薄膜
非平衡等离子体枪
大气压
氮气
四乙氧基硅烷
基底温度
Silicon oxide films
non-equilibrium plasma jet
atmospheric pressure
nitrogen
TEOS
substrate temperature
