期刊文献+

Sol-Gel法制备Ba_xSr_(1-x)TiO_3铁电薄膜化学机制的探讨 被引量:8

Studies on the Chemical Mechanism of Ba_xSr_(l-x)TiO_3 Ferroelectric Thin Films by Sol-Gel Method
下载PDF
导出
摘要 用FTIR分析,结合DSC、XRD、AFM实验结果,展示了sol-gel法制备BaxSr1-xTiO3(BST)薄膜热演化过程的化学机制.研究表明:螯合剂HACAC的引入减缓钛醇盐水解速率、改善晶化途径、降低结晶起始温度,从而制得了晶化完善、致密无裂纹的BST薄膜. FTIR analysis combined with DSC, XRD and AFM experiments was used to study on the chemical mechanism of thermal evolution for BaxSrl-xTiO3 (BST) thin films derived by sol-gel method. Acetylacetone(HAcAc) was introduced as a chelating agent to reduce a rapid hydrolysis rate of Ti-alkoxide, to improve its crystallization path, to decrease its crystallization temperature. And then the densified and crack-free BST thin films with better crystallization were fabricated.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2000年第2期287-292,共6页 Journal of Inorganic Materials
基金 国家自然基金!(59572038)
关键词 BST薄膜 sol-gel工艺 铁电薄膜 BST thin films sol-gel method FTIR DSC XRD AFM
  • 相关文献

参考文献3

  • 1Ding Y P,Advances in Science and Technology.20,1999年,615页 被引量:1
  • 2陈允魁,红外吸收光谱法及其应用,1993年,2,13,7,135页 被引量:1
  • 3Ding Y P,Mater Res Bull 被引量:1

同被引文献33

  • 1陈宏伟,杨传仁,符春林,赵莉,高志强.钛酸锶钡(BST)薄膜的介电性能研究[J].功能材料,2004,35(5):615-617. 被引量:5
  • 2LIOU J W, ChIOU B S. Dielectric characteristics of doped Ba1-x SrxTiO3 at the paralectric state[J]. Mater Chem Phys,1997, 51: 59-63. 被引量:1
  • 3LEE JAE-SHIN, PARK JAE-SEOK, KIM JIN-SUP, et al.Preparation of (Ba, Sr)TiO3 thin film with high pyroelectric coefficients at ambient temperatures, [J]. Jpn J Appl Phys Part 2, 1999, 38(5B): 574-576. 被引量:1
  • 4LIU Yu, ANDREA BORGIOLI, AMIT S NAGRA, et al. Kband 3-bit low-loss distrited MEMS phase shifter[J]. IEEEMicrowave Guided Wave Lett, 2000, 10(10): 415-417. 被引量:1
  • 5MANDELELMAN J A, DENNARD R H, BRONNER G B,et al. Challenges and future direction for the scaling of Dynamic random-access memory (DRAM)[J]. IBM J Res Dev,2002, 46(2/3) : 187-212. 被引量:1
  • 6KOTECKI D E, ATHAVALE S D, BANIECKI J D, et al.(Ba, Sr)TiO3 dielectrics for future stacked-capacitor DRAM[J]. IBM J Rev Dev, 1999, 43(3): 367-382. 被引量:1
  • 7ERKER ERICH G, NAGRA AMIT S, LIU Yu, etal. Monolithic Kα-band phase shifter using voltage tunable BaSrTiO3 parallel plate capacitors[J]. IEEE Microwave Guided Wave Lett, 2000, 10(1): 10-12. 被引量:1
  • 8KAMALASANAN M N,KUMAR N D,CHANDRA S. Fourier transform-infrared and optical studies on sol - gel synthesized SrTiO3 precursor films[J]. J Mater Sci, 1996,31 (10): 2741-2 745. 被引量:1
  • 9JANG S I, CHOI B C, JANG H M. Phase formation kinetics of xerogel and electrical properties of sol -gel-derived BaxSr1-xTiO3 thin films [J]. J Mater Res, 1997, 12 (5):1 327-1 334. 被引量:1
  • 10Wu D,Li A D,Ling H Q,et al. Preparation of Ba0.sSr0.5-TiO3 thin films by sol-gel method with rapid thermal annealing. Appl Surf Sci,2000,165:309 被引量:1

引证文献8

二级引证文献33

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部